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| Si2323DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 65.0615 47.9253 41.1729 9.6980 Thermal Capacitance (Joules/C) Ambient 1.1655 17.3479 m 3.0586 m 582.7750 Case N/A N/A N/A N/A Case N/A N/A N/A N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73620 Revision 22-Aug-05 www.vishay.com 1 Si2323DS_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note: NA indicates not applicable Ambient 30.1437 57.6679 21.8656 55.0958 Thermal Capacitance (Joules/C) Ambient 1.4173 187.5234 m 4.6627 m 853.4095 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73620 Revision 22-Aug-05 Si2323DS_RC Vishay Siliconix Document Number: 73620 Revision 22-Aug-05 www.vishay.com 3 |
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